Manufacturer Part Number
FQD16N25CTM
Manufacturer
onsemi
Introduction
This product is a discrete semiconductor device, specifically a transistor with a field-effect transistor (FET) structure. It is classified as a single N-channel MOSFET.
Product Features and Performance
Drain to Source Voltage (Vdss) of 250 V
Maximum Gate-Source Voltage (Vgs) of ±30 V
On-State Resistance (Rds(on)) of 270 mΩ at 8 A, 10 V
Continuous Drain Current (Id) of 16 A at 25°C (Tc)
Input Capacitance (Ciss) of 1080 pF at 25 V
Maximum Power Dissipation of 160 W at 25°C (Tc)
Operating Temperature Range of -55°C to 150°C (TJ)
Product Advantages
High voltage and current handling capabilities
Low on-state resistance for efficient power switching
Compact TO-252 package for surface mount applications
Key Technical Parameters
MOSFET technology
N-channel FET type
Threshold Voltage (Vgs(th)) of 4 V at 250 A
Drive Voltage Range of 10 V
Gate Charge (Qg) of 53.5 nC at 10 V
Quality and Safety Features
RoHS3 compliant
TO-252AA package
Compatibility
This MOSFET is designed for a wide range of power switching and control applications.
Application Areas
Power supplies
Motor control
Inverters
Converters
Industrial automation
Product Lifecycle
The FQD16N25CTM is an active and currently available product from onsemi. Replacement or upgrade options may be available, but the specific lifecycle information is not provided.
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-state resistance for efficient power conversion
Compact and thermally efficient TO-252 package
Suitable for a wide range of power electronics applications
Proven onsemi quality and reliability
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