Manufacturer Part Number
FQD17P06TF
Manufacturer
onsemi
Introduction
The FQD17P06TF is a P-channel MOSFET transistor from onsemi's QFET series, designed for a variety of power management and switching applications.
Product Features and Performance
60V Drain to Source Voltage (Vdss)
±25V Gate to Source Voltage (Vgs)
135mOhm Drain-Source On-Resistance (Rds(on)) at 6A, 10V
12A Continuous Drain Current (Id) at 25°C
900pF Input Capacitance (Ciss) at 25V
5W Power Dissipation at 25°C, 44W at Case Temperature
Operating Temperature Range: -55°C to 150°C
Product Advantages
Low on-resistance for efficient power conversion
High current handling capability
Wide voltage and temperature range
Key Technical Parameters
MOSFET Technology
P-Channel FET Type
4V Gate Threshold Voltage (Vgs(th)) at 250A
27nC Gate Charge (Qg) at 10V
Quality and Safety Features
TO-252AA (DPak) Package for Surface Mount
Tape and Reel Packaging
Compatibility
This MOSFET is widely compatible with various power management and switching applications.
Application Areas
Power supplies
Motor drives
Battery chargers
Lighting controls
Industrial and consumer electronics
Product Lifecycle
The FQD17P06TF is an active product and is not nearing discontinuation. Replacement or upgrade options may be available.
Key Reasons to Choose This Product
Excellent performance in terms of low on-resistance, high current capability, and wide operating range
Compact and efficient surface-mount package
Proven reliability and quality from onsemi
Suitability for a broad range of power management and switching applications
FQD19N10LFairchild (onsemi)
FQD19N10L MOSAMI Semiconductor/onsemi