Manufacturer Part Number
FQD18N20V2TM
Manufacturer
onsemi
Introduction
High-voltage, N-channel power MOSFET
Product Features and Performance
Rated for 200 V drain-to-source voltage
Low on-resistance of 140 mΩ typical
Capable of 15 A continuous drain current at 25°C
Product Advantages
Low gate charge for efficient switching
Excellent thermal performance with up to 83 W power dissipation
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 200 V
Gate-to-Source Voltage (Vgs): ±30 V
On-Resistance (Rds(on)): 140 mΩ @ 7.5 A, 10 V
Drain Current (Id): 15 A @ 25°C
Input Capacitance (Ciss): 1080 pF @ 25 V
Power Dissipation (Ptot): 2.5 W @ 25°C, 83 W @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount applications
Compatibility
TO-252-3, DPak (2 Leads + Tab), SC-63 package
Application Areas
Switching power supplies
Motor drives
Industrial and consumer electronics
Product Lifecycle
Current product, no plans for discontinuation
Replacements and upgrades available
Key Reasons to Choose This Product
High voltage rating up to 200 V
Low on-resistance for efficient power conversion
Excellent thermal performance for high power applications
Wide operating temperature range for reliable operation
Compact surface mount package for space-constrained designs
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