FQD18N20V2TM - onsemi

Manufacturer Part Number

FQD18N20V2TM

Manufacturer

onsemi

Introduction

High-voltage, N-channel power MOSFET

Product Features and Performance

Rated for 200 V drain-to-source voltage

Low on-resistance of 140 mΩ typical

Capable of 15 A continuous drain current at 25°C

Product Advantages

Low gate charge for efficient switching

Excellent thermal performance with up to 83 W power dissipation

Wide operating temperature range of -55°C to 150°C

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 200 V

Gate-to-Source Voltage (Vgs): ±30 V

On-Resistance (Rds(on)): 140 mΩ @ 7.5 A, 10 V

Drain Current (Id): 15 A @ 25°C

Input Capacitance (Ciss): 1080 pF @ 25 V

Power Dissipation (Ptot): 2.5 W @ 25°C, 83 W @ 25°C

Quality and Safety Features

RoHS3 compliant

Suitable for surface mount applications

Compatibility

TO-252-3, DPak (2 Leads + Tab), SC-63 package

Application Areas

Switching power supplies

Motor drives

Industrial and consumer electronics

Product Lifecycle

Current product, no plans for discontinuation

Replacements and upgrades available

Key Reasons to Choose This Product

High voltage rating up to 200 V

Low on-resistance for efficient power conversion

Excellent thermal performance for high power applications

Wide operating temperature range for reliable operation

Compact surface mount package for space-constrained designs