Manufacturer Part Number
FQD19N10LTM
Manufacturer
onsemi
Introduction
This product is a discrete N-channel MOSFET transistor from onsemi's QFET series, designed for a variety of power switching and control applications.
Product Features and Performance
100V drain-source voltage rating
100mΩ maximum on-resistance at 7.8A and 10V gate-source voltage
6A continuous drain current at 25°C case temperature
870pF maximum input capacitance at 25V drain-source voltage
5W maximum power dissipation at 25°C ambient temperature, 50W at 25°C case temperature
-55°C to 150°C operating temperature range
Product Advantages
Low on-resistance for efficient power conversion
High current handling capability
Wide temperature operating range
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 100mΩ @ 7.8A, 10V
Drain Current (Id): 15.6A @ 25°C
Input Capacitance (Ciss): 870pF @ 25V
Power Dissipation: 2.5W @ 25°C, 50W @ 25°C
Quality and Safety Features
RoHS3 compliant
TO-252AA (DPAK) package for surface mount assembly
Compatibility
This MOSFET is designed to be compatible with a wide range of power electronics and control applications.
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
General power switching and control
Product Lifecycle
This product is an active and available part from onsemi. There are no immediate plans for discontinuation, and replacement or upgrade options may be available.
Key Reasons to Choose This Product
Low on-resistance for high efficiency
High current handling capability
Wide temperature operating range
RoHS3 compliance for environmental responsibility
Surface mount TO-252AA package for ease of integration
FQD19N10L MOSAMI Semiconductor/onsemi