Manufacturer Part Number
FQD1N60CTM
Manufacturer
onsemi
Introduction
The FQD1N60CTM is a high-performance N-channel power MOSFET from onsemi, designed for a variety of power conversion and switching applications.
Product Features and Performance
600V drain-to-source voltage rating
Low on-resistance of 11.5 ohms at 500mA, 10V
Continuous drain current of 1A at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 170pF at 25V
Maximum power dissipation of 2.5W at 25°C ambient temperature and 28W at 25°C case temperature
Product Advantages
Excellent performance for power conversion and switching
High voltage and current handling capabilities
Efficient heat dissipation
Reliable operation across a wide temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 11.5 ohms at 500mA, 10V
Continuous Drain Current (Id): 1A at 25°C
Input Capacitance (Ciss): 170pF at 25V
Power Dissipation (Ptot): 2.5W at 25°C (ambient), 28W at 25°C (case)
Quality and Safety Features
RoHS3 compliant
TO-252AA package for efficient heat dissipation
Compatibility
Compatible with a variety of power conversion and switching applications
Application Areas
Power supplies
Motor drives
Inverters
Switched-mode power supplies
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and available for purchase.
Replacements or upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Wide operating temperature range for reliable performance
Compact and efficient TO-252AA package
RoHS3 compliance for environmental responsibility
Suitable for a wide range of power conversion and switching applications