Manufacturer Part Number
FQD1N80TM
Manufacturer
onsemi
Introduction
High-voltage, high-performance N-channel MOSFET in a TO-252 (DPAK) package.
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 800 V
Extremely low on-resistance (Rds(on)) of 20 Ω @ 500 mA, 10 V
Continuous Drain Current (ID) of 1 A at 25°C
Input Capacitance (Ciss) of 195 pF @ 25 V
Power Dissipation (Ptot) of 2.5 W at Ta and 45 W at Tc
Operating Temperature Range of -55°C to 150°C
Product Advantages
High voltage and low on-resistance for efficient power conversion
Compact TO-252 (DPAK) package for space-saving design
Suitable for a wide range of high-voltage applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 800 V
Gate-to-Source Voltage (Vgs): ±30 V
On-Resistance (Rds(on)): 20 Ω @ 500 mA, 10 V
Continuous Drain Current (ID): 1 A at 25°C
Input Capacitance (Ciss): 195 pF @ 25 V
Power Dissipation (Ptot): 2.5 W at Ta, 45 W at Tc
Quality and Safety Features
RoHS3 compliant
Reliable and durable design
Compatibility
Suitable for a wide range of high-voltage, high-performance power conversion and control applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Other high-voltage, high-performance power electronics applications
Product Lifecycle
Current product, no discontinuation or replacement plans known
Several Key Reasons to Choose This Product
High voltage and low on-resistance for efficient power conversion
Compact TO-252 (DPAK) package for space-saving design
Reliable and durable design with RoHS3 compliance
Suitable for a wide range of high-voltage, high-performance power electronics applications
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FQD1N80 MOSMicron Technology