FQD1N80TM - onsemi

Manufacturer Part Number

FQD1N80TM

Manufacturer

onsemi

Introduction

High-voltage, high-performance N-channel MOSFET in a TO-252 (DPAK) package.

Product Features and Performance

Drain-to-Source Voltage (Vdss) of 800 V

Extremely low on-resistance (Rds(on)) of 20 Ω @ 500 mA, 10 V

Continuous Drain Current (ID) of 1 A at 25°C

Input Capacitance (Ciss) of 195 pF @ 25 V

Power Dissipation (Ptot) of 2.5 W at Ta and 45 W at Tc

Operating Temperature Range of -55°C to 150°C

Product Advantages

High voltage and low on-resistance for efficient power conversion

Compact TO-252 (DPAK) package for space-saving design

Suitable for a wide range of high-voltage applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 800 V

Gate-to-Source Voltage (Vgs): ±30 V

On-Resistance (Rds(on)): 20 Ω @ 500 mA, 10 V

Continuous Drain Current (ID): 1 A at 25°C

Input Capacitance (Ciss): 195 pF @ 25 V

Power Dissipation (Ptot): 2.5 W at Ta, 45 W at Tc

Quality and Safety Features

RoHS3 compliant

Reliable and durable design

Compatibility

Suitable for a wide range of high-voltage, high-performance power conversion and control applications

Application Areas

Power supplies

Motor drives

Inverters

Converters

Other high-voltage, high-performance power electronics applications

Product Lifecycle

Current product, no discontinuation or replacement plans known

Several Key Reasons to Choose This Product

High voltage and low on-resistance for efficient power conversion

Compact TO-252 (DPAK) package for space-saving design

Reliable and durable design with RoHS3 compliance

Suitable for a wide range of high-voltage, high-performance power electronics applications