Manufacturer Part Number
FQD1N60CTM
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-channel power MOSFET for various power management applications
Product Features and Performance
High breakdown voltage of 600V
Low on-resistance of 11.5Ω
Continuous drain current of 1A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge
Product Advantages
Excellent power efficiency
Reliable performance
Suitable for various power conversion applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Maximum Gate-Source Voltage (Vgs): ±30V
Drain-Source On-Resistance (Rds(on)): 11.5Ω @ 500mA, 10V
Drain Current (Id): 1A (Tc)
Input Capacitance (Ciss): 170pF @ 25V
Power Dissipation: 2.5W (Ta), 28W (Tc)
Quality and Safety Features
Robust design for reliable operation
Compliance with safety standards
Compatibility
Suitable for a wide range of power management applications
Application Areas
Switched-mode power supplies (SMPS)
Motor drives
Lighting ballasts
Industrial equipment
Automotive electronics
Product Lifecycle
Currently available
No plans for discontinuation
Several Key Reasons to Choose This Product
High breakdown voltage for increased safety and reliability
Low on-resistance for improved efficiency
Wide operating temperature range for versatile applications
Fast switching speed and low gate charge for improved switching performance
Robust design and compliance with safety standards for reliable operation
FQD1N60CFairchild (onsemi)
FQD1N80 MOSMicron Technology