Manufacturer Part Number
FQD20N06LETM
Manufacturer
onsemi
Introduction
The FQD20N06LETM is a high-performance, N-channel power MOSFET transistor from onsemi. It is designed for a wide range of power electronics applications.
Product Features and Performance
60V drain-source voltage rating
Low on-resistance of 60mΩ
Continuous drain current of 17.2A at 25°C case temperature
Operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge for efficient operation
Compact TO-252AA package for surface mount applications
Product Advantages
Excellent power handling and efficiency
Reliable performance across wide temperature range
Compact and thermally efficient package
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 60mΩ @ 8.6A, 10V
Continuous Drain Current (Id): 17.2A @ 25°C
Input Capacitance (Ciss): 665pF @ 25V
Power Dissipation: 2.5W @ 25°C, 38W @ 25°C case
Quality and Safety Features
MOSFET technology for high reliability
Meets industrial standards and safety requirements
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently in active production
No immediate plans for discontinuation
Replacements and upgrades may become available in the future
Key Reasons to Choose
High-performance power handling
Efficient and reliable operation
Compact and thermally efficient package
Wide temperature range capability
Suitable for diverse power electronics applications
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