Manufacturer Part Number
FQD20N06TM
Manufacturer
onsemi
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
60V Drain-to-Source Voltage
63mΩ On-Resistance
8A Continuous Drain Current
590pF Input Capacitance
5W Power Dissipation (Ta), 38W (Tc)
-55°C to 150°C Operating Temperature Range
Product Advantages
Low On-Resistance for Efficient Power Switching
High Current Handling Capability
Compact TO-252 Package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 63mΩ
Continuous Drain Current (Id): 16.8A
Input Capacitance (Ciss): 590pF
Power Dissipation (Ta, Tc): 2.5W, 38W
Quality and Safety Features
RoHS3 Compliant
TO-252 Package for Reliable Surface Mount Mounting
Compatibility
This N-Channel MOSFET is compatible with a wide range of electronic circuit designs that require efficient power switching and high current handling capabilities.
Application Areas
Power Supplies
Motor Drives
Lighting Controls
Automotive Electronics
Industrial Control Systems
Product Lifecycle
This MOSFET model is an active product and is not nearing discontinuation. Replacement or upgrade options may be available from the manufacturer as technology evolves.
Key Reasons to Choose This Product
Excellent performance characteristics, including low on-resistance, high current handling, and wide operating temperature range.
Compact and reliable TO-252 package for efficient surface mount integration.
RoHS3 compliance for environmentally-conscious design.
Proven onsemi quality and performance in a wide range of power electronics applications.
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