Manufacturer Part Number
FQD20N06TM
Manufacturer
Fairchild (onsemi)
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
TO-252, (D-Pak) package
TO-252-3, DPak (2 Leads + Tab), SC-63 package
QFET series
N-Channel MOSFET
Operating temperature: -55°C to 150°C (TJ)
Drain to Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs) (Max): ±25V
On-State Resistance (Rds On) (Max): 63mOhm @ 8.4A, 10V
Continuous Drain Current (Id) @ 25°C: 16.8A (Tc)
Input Capacitance (Ciss) (Max): 590pF @ 25V
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Threshold Voltage (Vgs(th)) (Max): 4V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg) (Max): 15nC @ 10V
Product Advantages
High power handling capability
Low on-state resistance
Suitable for high-frequency, high-speed switching applications
Key Technical Parameters
MOSFET (Metal Oxide) technology
Surface mount package
Quality and Safety Features
Suitable for high-temperature applications
Compatibility
Widely used in various electronic devices and power supply circuits
Application Areas
Power management
Switching circuits
Motor control
Lighting control
Consumer electronics
Product Lifecycle
Currently available
Replacements and upgrades may be available
Key Reasons to Choose This Product
High power handling and efficiency
Low on-state resistance for improved performance
Suitable for high-frequency, high-speed switching applications
Wide operating temperature range
Reliable and robust design
