FQD2N100TM - Fairchild Semiconductor

Manufacturer Part Number

FQD2N100TM

Manufacturer

Fairchild (onsemi)

Introduction

High-voltage, low on-resistance N-channel power MOSFET

Product Features and Performance

Voltage rating up to 1000V

Very low on-resistance of 9 ohms @ 800mA, 10V

Fast switching speed

High current handling capability up to 1.6A continuous drain current

Wide operating temperature range of -55°C to 150°C

Low input capacitance of 520pF

Low gate charge of 15.5nC @ 10V

Product Advantages

Excellent performance for high-voltage, high-current switching applications

Reliable and robust design for demanding environments

Optimized for efficiency and power density

Key Technical Parameters

Drain-Source Voltage (Vdss): 1000V

Gate-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 9 ohms @ 800mA, 10V

Continuous Drain Current (Id): 1.6A @ 25°C

Input Capacitance (Ciss): 520pF @ 25V

Power Dissipation: 2.5W @ Ta, 50W @ Tc

Quality and Safety Features

Robust TO-252 package design

Tested for high reliability and safety

Compatibility

Suitable for a wide range of high-voltage, high-current switching applications

Application Areas

Switch-mode power supplies

Motor drives

Industrial and consumer electronics

Telecommunications equipment

Product Lifecycle

Currently in active production

Replacement and upgrade options available

Key Reasons to Choose This Product

Excellent performance and efficiency for high-voltage, high-current applications

Proven reliability and ruggedness for demanding environments

Optimized design for power density and cost-effectiveness

Broad compatibility and availability of replacement/upgrade options