Manufacturer Part Number
FQD17P06TM
Manufacturer
onsemi
Introduction
The FQD17P06TM is a P-channel power MOSFET from onsemi, designed for high-efficiency power conversion applications.
Product Features and Performance
60V drain-to-source voltage (Vdss)
135mΩ maximum on-resistance (Rds(on)) at 6A, 10V
12A continuous drain current (Id) at 25°C
900pF maximum input capacitance (Ciss) at 25V
5W power dissipation at 25°C, 44W at 100°C
Operating temperature range of -55°C to 150°C
Product Advantages
Low on-resistance for high efficiency
High current handling capability
Compact TO-252AA package
Suitable for high-frequency switching applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 60V
Gate-to-source voltage (Vgs): ±25V
On-resistance (Rds(on)): 135mΩ @ 6A, 10V
Continuous drain current (Id): 12A @ 25°C
Input capacitance (Ciss): 900pF @ 25V
Power dissipation: 2.5W (Ta), 44W (Tc)
Quality and Safety Features
RoHS3 compliant
ESD protection
Rugged and reliable design
Compatibility
Suitable for a wide range of high-efficiency power conversion applications, including DC-DC converters, motor drives, and power supplies.
Application Areas
High-efficiency power conversion
DC-DC converters
Motor drives
Power supplies
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Excellent efficiency due to low on-resistance
High current handling capability
Compact and reliable TO-252AA package
Suitable for high-frequency switching applications
Wide operating temperature range
FQD17P06Fairchild (onsemi)