FJN3305RTA - onsemi

Manufacturer Part Number

FJN3305RTA

Manufacturer

onsemi

Introduction

The FJN3305RTA is a pre-biased NPN bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications.

Product Features and Performance

Operates at a maximum power of 300 mW

Offers a maximum collector-emitter breakdown voltage of 50 V

Provides a maximum collector current of 100 mA

Features a maximum collector cutoff current of 100 nA (ICBO)

Exhibits a maximum collector-emitter saturation voltage of 300 mV @ 5 mA, 10 mA

Offers a minimum DC current gain (hFE) of 30 @ 5 mA, 5 V

Operates at a transition frequency of 250 MHz

Includes a 4.7 kΩ base resistor (R1) and a 10 kΩ emitter-base resistor (R2)

Product Advantages

Pre-biased configuration simplifies circuit design

Suitable for general-purpose amplifier and switching applications

Compact and space-saving through-hole package

Key Technical Parameters

Collector-emitter breakdown voltage: 50 V

Collector current: 100 mA

Collector cutoff current: 100 nA

DC current gain: 30 min. @ 5 mA, 5 V

Transition frequency: 250 MHz

Base resistor (R1): 4.7 kΩ

Emitter-base resistor (R2): 10 kΩ

Quality and Safety Features

RoHS3 compliant

TO-92-3 package with formed leads

Compatibility

TO-226-3, TO-92-3 (TO-226AA) package types

Application Areas

General-purpose amplifier and switching applications

Consumer electronics, industrial controls, and other electronic systems

Product Lifecycle

Active product, not nearing discontinuation

Replacement and upgrade options available from onsemi

Key Reasons to Choose This Product

Pre-biased configuration for simplified circuit design

Suitable for a wide range of amplifier and switching applications

Compact and space-saving through-hole package

Reliable performance with RoHS3 compliance

Readily available from onsemi with replacement options