DTC143ZET1G - onsemi

Manufacturer Part Number

DTC143ZET1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Transistors Bipolar (BJT) Single, Pre-Biased

Product Features and Performance

Power Max: 200 mW

Voltage Collector Emitter Breakdown (Max): 50 V

Current Collector (Ic) (Max): 100 mA

Current Collector Cutoff (Max): 500nA

Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA

Transistor Type: NPN Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V

Resistor Base (R1): 4.7 kOhms

Resistor Emitter Base (R2): 47 kOhms

Product Advantages

RoHS3 Compliant

Surface Mount Mounting Type

Available in Tape & Reel (TR) packaging

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 50 V

Current Collector (Ic) (Max): 100 mA

Transistor Type: NPN Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V

Quality and Safety Features

RoHS3 Compliant

Compatibility

SC-75, SOT-416 Package / Case

SC-75, SOT-416 Supplier Device Package

Application Areas

Discrete Semiconductor Applications

Product Lifecycle

Current product, no indication of discontinuation

Several Key Reasons to Choose This Product

RoHS3 Compliant

Surface Mount Mounting Type

High power handling capability up to 200 mW

Wide voltage and current range

Pre-biased NPN transistor configuration

High DC current gain of 80 minimum