FJN3302RTA - onsemi

Manufacturer Part Number

FJN3302RTA

Manufacturer

onsemi

Introduction

The FJN3302RTA is a pre-biased NPN transistor from onsemi, designed for various electronic applications.

Product Features and Performance

Power rating of 300 mW

Collector-emitter breakdown voltage up to 50 V

Collector current up to 100 mA

Collector cutoff current limited to 100 nA (ICBO)

Vce saturation voltage of 300 mV at 500 μA, 10 mA

DC current gain (hFE) of at least 30 at 5 mA, 5 V

Transition frequency of 250 MHz

Integrated base and emitter resistors of 10 kΩ each

Product Advantages

Pre-biased design simplifies circuit design

Compact TO-92-3 package for easy installation

Suitable for a wide range of electronic applications

Key Technical Parameters

Power Rating: 300 mW

Collector-Emitter Breakdown Voltage: 50 V

Collector Current: 100 mA

Collector Cutoff Current: 100 nA

Vce Saturation Voltage: 300 mV

DC Current Gain: 30 min.

Transition Frequency: 250 MHz

Base Resistor: 10 kΩ

Emitter Resistor: 10 kΩ

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

TO-92-3 (TO-226AA) package

Through-hole mounting

Application Areas

Amplifiers

Switches

Logic circuits

Drivers

General-purpose electronic applications

Product Lifecycle

Currently in production

Replacement or upgrade options available

Key Reasons to Choose This Product

Pre-biased design for simplified circuit implementation

High power rating and voltage/current capabilities

Excellent frequency performance with 250 MHz transition frequency

Integrated base and emitter resistors for easy integration

Compact and through-hole compatible package

RoHS3 compliance for environmental sustainability