Manufacturer Part Number
DTA123EM3T5G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single, Pre-Biased
Product Features and Performance
Power Handling: 260 mW
Collector-Emitter Breakdown Voltage: 50 V
Collector Current (Max): 100 mA
Collector Cutoff Current (Max): 500 nA
Collector-Emitter Saturation Voltage: 250 mV @ 5 mA, 10 mA
DC Current Gain (hFE): 8 Min. @ 5 mA, 10 V
Base Resistor (R1): 2.2 kΩ
Emitter-Base Resistor (R2): 2.2 kΩ
Product Advantages
Pre-biased design simplifies circuit design
Small footprint surface mount package
Key Technical Parameters
Transistor Type: PNP, Pre-Biased
Package: SOT-723
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with standard BJT applications
Application Areas
General purpose electronic circuits
Biasing and switching applications
Product Lifecycle
Current product, no discontinuation planned
Replacement/upgrade options available
Key Reasons to Choose This Product
Compact surface mount package
Pre-biased design for simplified circuit implementation
Reliable performance within specified electrical parameters
RoHS compliance for use in modern electronic systems