Manufacturer Part Number
FJN3305RTA
Manufacturer
Fairchild (onsemi)
Introduction
High-speed, pre-biased NPN transistor for general-purpose amplifier and switching applications.
Product Features and Performance
High-speed operation with 250 MHz transition frequency
Pre-biased design for easy implementation
Low collector-emitter saturation voltage
Wide collector-emitter breakdown voltage of 50V
High DC current gain (hFE) of at least 30 at 5mA, 5V
Product Advantages
Simplified circuit design with pre-biased configuration
Reliable high-speed performance
Versatile for various amplifier and switching applications
Robust design with high breakdown voltage
Key Technical Parameters
Power Rating: 300 mW
Collector-Emitter Breakdown Voltage: 50V
Collector Current (Max): 100 mA
Collector Cutoff Current: 100 nA
Collector-Emitter Saturation Voltage: 300 mV @ 500 µA, 10 mA
DC Current Gain (hFE): Minimum 30 @ 5 mA, 5V
Transition Frequency: 250 MHz
Base Resistor: 4.7 kΩ
Emitter-Base Resistor: 10 kΩ
Quality and Safety Features
RoHS3 compliant
Reliable TO-92-3 package
Compatibility
Through-hole mounting
Application Areas
General-purpose amplifier circuits
Switching applications
Diverse electronic circuits requiring high-speed, pre-biased transistor performance
Product Lifecycle
This product is an active, in-production device from Fairchild (onsemi).
Replacement or upgrade options are available from the manufacturer.
Key Reasons to Choose This Product
Optimized high-speed performance with 250 MHz transition frequency
Simplified circuit design with pre-biased configuration
Robust design with high collector-emitter breakdown voltage
Reliable operation with low saturation voltage and high current gain
Wide range of general-purpose amplifier and switching applications