FJN3305RTA - Fairchild Semiconductor

Manufacturer Part Number

FJN3305RTA

Manufacturer

Fairchild (onsemi)

Introduction

High-speed, pre-biased NPN transistor for general-purpose amplifier and switching applications.

Product Features and Performance

High-speed operation with 250 MHz transition frequency

Pre-biased design for easy implementation

Low collector-emitter saturation voltage

Wide collector-emitter breakdown voltage of 50V

High DC current gain (hFE) of at least 30 at 5mA, 5V

Product Advantages

Simplified circuit design with pre-biased configuration

Reliable high-speed performance

Versatile for various amplifier and switching applications

Robust design with high breakdown voltage

Key Technical Parameters

Power Rating: 300 mW

Collector-Emitter Breakdown Voltage: 50V

Collector Current (Max): 100 mA

Collector Cutoff Current: 100 nA

Collector-Emitter Saturation Voltage: 300 mV @ 500 µA, 10 mA

DC Current Gain (hFE): Minimum 30 @ 5 mA, 5V

Transition Frequency: 250 MHz

Base Resistor: 4.7 kΩ

Emitter-Base Resistor: 10 kΩ

Quality and Safety Features

RoHS3 compliant

Reliable TO-92-3 package

Compatibility

Through-hole mounting

Application Areas

General-purpose amplifier circuits

Switching applications

Diverse electronic circuits requiring high-speed, pre-biased transistor performance

Product Lifecycle

This product is an active, in-production device from Fairchild (onsemi).

Replacement or upgrade options are available from the manufacturer.

Key Reasons to Choose This Product

Optimized high-speed performance with 250 MHz transition frequency

Simplified circuit design with pre-biased configuration

Robust design with high collector-emitter breakdown voltage

Reliable operation with low saturation voltage and high current gain

Wide range of general-purpose amplifier and switching applications