DTA114TET1G - onsemi

Manufacturer Part Number

DTA114TET1G

Manufacturer

onsemi

Introduction

High-performance, pre-biased PNP bipolar junction transistor (BJT)

Designed for general-purpose switching and amplification applications

Product Features and Performance

Low collector-emitter saturation voltage (Vce(sat))

High current gain (hFE)

Low collector cutoff current (Ic(off))

Integrated base resistor for simplified biasing

Compact surface-mount package

Product Advantages

Improved efficiency and reliability

Simplified circuit design

Compact form factor for space-constrained applications

Key Technical Parameters

Power rating: 200 mW

Collector-emitter breakdown voltage: 50 V

Collector current (max): 100 mA

Collector cutoff current (max): 500 nA

Collector-emitter saturation voltage: 250 mV @ 10 mA, 300 μA

Current gain (min): 160 @ 5 mA, 10 V

Integrated base resistor: 10 kΩ

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering

Compatibility

Compatible with standard surface-mount assembly processes

Application Areas

General-purpose switching and amplification

Consumer electronics

Industrial controls

Telecommunications equipment

Product Lifecycle

Active and widely available

Replacement and upgrade options may be available

Key Reasons to Choose This Product

Excellent electrical performance characteristics

Simplified biasing with integrated base resistor

Compact and efficient surface-mount package

Proven reliability and quality from onsemi

Compatibility with standard assembly processes