Manufacturer Part Number
FGA6560WDF
Manufacturer
onsemi
Introduction
High power IGBT (Insulated Gate Bipolar Transistor) device for industrial and power electronics applications
Product Features and Performance
Trench field stop IGBT technology
High power density and efficiency
Low on-state voltage
Fast switching speed
High current handling capability
Product Advantages
Excellent thermal performance
Robust design for reliable operation
Optimized for high-power applications
Key Technical Parameters
Collector-Emitter Voltage (VCES): 650V
Collector Current (IC): 120A
Collector-Emitter Saturation Voltage (VCE(on)): 2.3V @ 15V, 60A
Reverse Recovery Time (trr): 110ns
Gate Charge (Qg): 84nC
Quality and Safety Features
RoHS3 compliant
Qualified to industrial standards
Compatibility
Suitable for use in various industrial and power electronics applications
Application Areas
Motor drives
Power supplies
Welding equipment
Induction heating
Uninterruptible power supplies (UPS)
Renewable energy systems
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Several Key Reasons to Choose This Product
Highly efficient and reliable performance
Excellent thermal management for high power handling
Fast switching capabilities for high-frequency applications
Robust design ensures long-term durability
Wide operating temperature range for diverse usage environments
FGA70N33BFairchild (onsemi)