Manufacturer Part Number
FGA60N65SMD
Manufacturer
onsemi
Introduction
The FGA60N65SMD is a high-performance IGBT (Insulated Gate Bipolar Transistor) device designed for use in various power electronics applications.
Product Features and Performance
Field Stop IGBT technology
High power density and efficiency
Low conduction and switching losses
Fast switching speed
Wide operating temperature range (-55°C to 175°C)
High collector-emitter breakdown voltage (650V)
High collector current (120A continuous, 180A pulsed)
Low on-state voltage (2.5V @ 15V, 60A)
Fast reverse recovery time (47ns)
Low gate charge (189nC)
Product Advantages
Excellent performance and reliability
Suitable for high-power, high-efficiency applications
Easy integration into power electronics designs
Robust design for demanding environments
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 650V
Collector Current (Continuous/Pulsed): 120A/180A
On-state Voltage (Vce(on)): 2.5V @ 15V, 60A
Reverse Recovery Time (trr): 47ns
Gate Charge: 189nC
Switching Energy (Turn-on/Turn-off): 1.54mJ/450μJ
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of power electronics applications, including motor drives, power supplies, and inverters.
Application Areas
Industrial equipment
Renewable energy systems
Electric vehicles
Home appliances
Power conversion systems
Product Lifecycle
The FGA60N65SMD is an actively supported product in onsemi's portfolio. There are no known plans for discontinuation, and suitable replacement or upgrade options may be available if required.
Key Reasons to Choose This Product
Excellent performance and efficiency
Wide operating temperature range for demanding environments
Fast switching speed and low switching losses
Robust and reliable design
Easy integration into power electronics systems
Backed by onsemi's reputation for quality and innovation
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