Manufacturer Part Number
FGA50T65SHD
Manufacturer
onsemi
Introduction
High-power, high-speed trench field stop insulated gate bipolar transistor (IGBT) optimized for industrial and power conversion applications.
Product Features and Performance
Trench field stop IGBT technology for high speed and low losses
High power rating of 319W
High voltage rating of 650V
High current rating of 100A continuous, 150A pulsed
Low collector-emitter saturation voltage of 2.1V at 50A
Fast switching performance with 22.4ns turn-on and 73.6ns turn-off times
Low gate charge of 87nC
Product Advantages
Excellent power handling capability
Fast switching for high-efficiency power conversion
Compact and robust TO-3P package
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 650V
Collector Current (Continuous): 100A
Collector Current (Pulsed): 150A
Collector-Emitter Saturation Voltage: 2.1V
Reverse Recovery Time: 34.6ns
Gate Charge: 87nC
Operating Temperature Range: -55°C to 175°C
Quality and Safety Features
RoHS3 compliant
Industrially-qualified to meet safety and reliability standards
Compatibility
Compatible with various industrial power conversion applications, such as motor drives, power supplies, and inverters
Application Areas
Industrial power electronics
Motor drives
Uninterruptible power supplies (UPS)
Renewable energy systems
Welding equipment
Induction heating
Switch-mode power supplies
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available from onsemi
Key Reasons to Choose This Product
High power density and efficiency for compact, high-performance designs
Fast switching for low-loss power conversion
Robust industrial-grade quality and reliability
Wide operating temperature range for demanding applications
Compatibility with various power electronics systems
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