Manufacturer Part Number
FGA6540WDF
Manufacturer
Fairchild (onsemi)
Introduction
High-power discrete IGBT transistor
Product Features and Performance
Trench field stop IGBT technology
650V collector-emitter breakdown voltage
80A maximum collector current
238W maximum power dissipation
3V maximum collector-emitter voltage at 15V gate-emitter voltage and 40A collector current
101ns reverse recovery time
5nC gate charge
120A maximum pulsed collector current
37mJ turn-on and 250μJ turn-off switching energy
Product Advantages
Efficient power switching
Reliable performance
Supports high-power applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 650V
Current Collector (Ic) (Max): 80A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Reverse Recovery Time (trr): 101ns
Gate Charge: 55.5nC
Current Collector Pulsed (Icm): 120A
Switching Energy: 1.37mJ (on), 250μJ (off)
Td (on/off) @ 25°C: 16.8ns/54.4ns
Quality and Safety Features
Operating temperature range: -55°C to 175°C
Compatibility
TO-3PN package, through-hole mounting
Application Areas
High-power switching applications, such as industrial motor drives, power supplies, and inverters
Product Lifecycle
No information on discontinuation or availability of replacements/upgrades
Several Key Reasons to Choose This Product
Efficient power switching performance with low collector-emitter voltage and switching energy
Reliable and robust design with high voltage, current, and power ratings
Supports high-power industrial applications with wide operating temperature range
FGA60N60UFDFairchild (onsemi)