Manufacturer Part Number
FGA6540WDF
Manufacturer
onsemi
Introduction
High-power discrete semiconductor device
IGBT (Insulated Gate Bipolar Transistor) transistor
Product Features and Performance
Trench Field Stop technology
High blocking voltage of 650V
High collector current of 80A
Low Vce(on) of 2.3V at 15V gate, 40A
Fast switching with turn-on time of 16.8ns and turn-off time of 54.4ns
High power handling capability of 238W
Product Advantages
High efficiency and low switching losses
Compact and robust design
Suitable for high-power applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage (max): 650V
Collector Current (max): 80A
Collector Current Pulsed (max): 120A
Vce(on) (max): 2.3V @ 15V, 40A
Reverse Recovery Time: 101ns
Gate Charge: 55.5nC
Switching Energy: 1.37mJ (on), 250μJ (off)
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 175°C
Compatibility
TO-3P-3 package
Compatible with various power electronics applications
Application Areas
High-power motor drives
Switch-mode power supplies
Inverters and converters
Industrial and consumer electronics
Product Lifecycle
Current product offering, no discontinuation planned
Replacement and upgrade options available
Key Reasons to Choose This Product
High power density and efficiency
Fast switching capability
Robust and reliable performance
Suitable for a wide range of high-power applications
Availability of compatible replacement and upgrade options