FGA6540WDF - onsemi

Manufacturer Part Number

FGA6540WDF

Manufacturer

onsemi

Introduction

High-power discrete semiconductor device

IGBT (Insulated Gate Bipolar Transistor) transistor

Product Features and Performance

Trench Field Stop technology

High blocking voltage of 650V

High collector current of 80A

Low Vce(on) of 2.3V at 15V gate, 40A

Fast switching with turn-on time of 16.8ns and turn-off time of 54.4ns

High power handling capability of 238W

Product Advantages

High efficiency and low switching losses

Compact and robust design

Suitable for high-power applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage (max): 650V

Collector Current (max): 80A

Collector Current Pulsed (max): 120A

Vce(on) (max): 2.3V @ 15V, 40A

Reverse Recovery Time: 101ns

Gate Charge: 55.5nC

Switching Energy: 1.37mJ (on), 250μJ (off)

Quality and Safety Features

RoHS3 compliant

Operating temperature range: -55°C to 175°C

Compatibility

TO-3P-3 package

Compatible with various power electronics applications

Application Areas

High-power motor drives

Switch-mode power supplies

Inverters and converters

Industrial and consumer electronics

Product Lifecycle

Current product offering, no discontinuation planned

Replacement and upgrade options available

Key Reasons to Choose This Product

High power density and efficiency

Fast switching capability

Robust and reliable performance

Suitable for a wide range of high-power applications

Availability of compatible replacement and upgrade options