Manufacturer Part Number
FGA60N60UFDTU
Manufacturer
onsemi
Introduction
High power IGBT (Insulated Gate Bipolar Transistor) suitable for industrial and power conversion applications
Product Features and Performance
Field stop IGBT technology
600V collector-emitter breakdown voltage
120A maximum collector current
4V maximum collector-emitter saturation voltage @ 60A
47ns reverse recovery time
188nC gate charge
180A maximum pulsed collector current
81mJ turn-on, 810μJ turn-off switching energy
23ns/130ns turn-on/turn-off delay times
Product Advantages
High power handling capability
Low conduction and switching losses
Fast switching speed
Robust and reliable performance
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600V
Current Collector (Ic) (Max): 120A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
Reverse Recovery Time (trr): 47ns
Gate Charge: 188nC
Current Collector Pulsed (Icm): 180A
Switching Energy: 1.81mJ (on), 810μJ (off)
Td (on/off) @ 25°C: 23ns/130ns
Quality and Safety Features
RoHS3 compliant
TO-3PN package with high power handling capability
Compatibility
Can be used in various industrial power conversion applications
Application Areas
Industrial motor drives
Power supplies
Welding equipment
Induction heating
Uninterruptible power supplies (UPS)
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
High power handling capability up to 298W
Low conduction and switching losses for improved efficiency
Fast switching speed for high-frequency applications
Robust and reliable performance in harsh industrial environments
RoHS3 compliance for environmental sustainability
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