FDP19N40 - onsemi

Manufacturer Part Number

FDP19N40

Manufacturer

onsemi

Introduction

This product is a discrete semiconductor device, specifically a N-channel MOSFET transistor.

Product Features and Performance

High voltage rating of 400V drain-source voltage

Low on-resistance of 240mOhm at 9.5A, 10V

High continuous drain current of 19A at 25°C

Wide operating temperature range of -55°C to 150°C

Low input capacitance of 2115pF at 25V

High power dissipation capability of 215W at Tc

Product Advantages

Excellent efficiency and low power loss

Robust and reliable performance

Suitable for high-voltage, high-current applications

Key Technical Parameters

Drain-Source Voltage (Vdss): 400V

Gate-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 240mOhm @ 9.5A, 10V

Continuous Drain Current (Id): 19A @ 25°C

Input Capacitance (Ciss): 2115pF @ 25V

Power Dissipation (Tc): 215W

Quality and Safety Features

RoHS-compliant (ROHS3)

Suitable for through-hole mounting

Compatibility

This MOSFET is compatible with a wide range of electronic circuits and systems requiring high-voltage, high-current switching capabilities.

Application Areas

Switch-mode power supplies

Motor drives

Inverters

Uninterruptible power supplies (UPS)

Industrial and automotive electronics

Product Lifecycle

The FDP19N40 is an active product and is currently available from the manufacturer. No information is provided about potential discontinuation or availability of replacements or upgrades.

Key Reasons to Choose This Product

High voltage and current handling capabilities for demanding applications

Excellent efficiency and low power loss due to low on-resistance

Wide operating temperature range for reliable performance in various environments

Robust and reliable design for long-term use

RoHS compliance for environmental sustainability