Manufacturer Part Number
FDP20N50F
Manufacturer
onsemi
Introduction
The FDP20N50F is a high-performance N-Channel power MOSFET transistor designed for a wide range of power switching applications.
Product Features and Performance
High voltage rating of 500V drain-to-source
Low on-resistance of 260mΩ at 10A and 10V
Continuous drain current of 20A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 3390pF at 25V
Maximum power dissipation of 250W at Tc
Product Advantages
Excellent switching performance for efficient power conversion
High voltage handling capability
Low on-resistance for low conduction losses
Wide temperature range for versatile applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 260mΩ @ 10A, 10V
Continuous Drain Current (Id): 20A @ 25°C
Input Capacitance (Ciss): 3390pF @ 25V
Power Dissipation (Ptot): 250W @ Tc
Quality and Safety Features
RoHS3 compliant
TO-220-3 package for reliable mounting and heat dissipation
Compatibility
Suitable for a wide range of power switching applications
Application Areas
Switched-mode power supplies
Motor drives
Power inverters
Industrial controls
Automotive electronics
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
High voltage capability for demanding applications
Low on-resistance for efficient power conversion
Wide operating temperature range for versatile use
Reliable TO-220-3 package design
RoHS3 compliance for environmental responsibility