Manufacturer Part Number
FDP18N50
Manufacturer
onsemi
Introduction
High-voltage, high-current N-channel power MOSFET
Product Features and Performance
500V drain-to-source voltage
18A continuous drain current
265mΩ maximum on-resistance
Wide operating temperature range of -55°C to 150°C
Optimized for high-efficiency, high-frequency switching applications
Product Advantages
Low on-resistance for low conduction losses
High voltage handling capability
Robust design for reliable operation
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 265mΩ @ 9A, 10V
Continuous Drain Current (Id): 18A @ 25°C
Input Capacitance (Ciss): 2860pF @ 25V
Power Dissipation (Pd): 235W @ 25°C
Quality and Safety Features
RoHS3 compliant
TO-220-3 package for efficient heat dissipation
Compatibility
Suitable for a wide range of high-voltage, high-current switching applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Converters
Industrial and consumer electronics
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacements and upgrades may be available, consult manufacturer for details
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for improved efficiency
Robust and reliable design for demanding applications
Wide operating temperature range
RoHS3 compliance for environmental safety
FDP18N50 MOSAMI Semiconductor/onsemi