Manufacturer Part Number
FDP18N20F
Manufacturer
onsemi
Introduction
The FDP18N20F is a N-channel power MOSFET transistor from onsemi, designed for high-power switching applications.
Product Features and Performance
High voltage rating of 200V drain-to-source voltage (Vdss)
Low on-resistance of 145 mΩ @ 9A, 10V
Continuous drain current (ID) of 18A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge of 26 nC @ 10V
Suitable for various high-power switching applications
Product Advantages
High efficiency and low power losses
Robust and reliable performance
Compact and easy to integrate design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 200V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 145 mΩ @ 9A, 10V
Continuous Drain Current (ID): 18A at 25°C
Input Capacitance (Ciss): 1180 pF @ 25V
Power Dissipation (Pd): 100W at 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for through-hole mounting
Compatibility
Compatible with various high-power switching applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and automotive electronics
Product Lifecycle
Currently in production
No immediate plans for discontinuation
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
High efficiency and low power losses
Robust and reliable performance
Wide operating temperature range
Compact and easy to integrate design
Suitable for various high-power switching applications
FDP18N50 MOSAMI Semiconductor/onsemi