Manufacturer Part Number
FDP18N20F
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-channel power MOSFET in a TO-220-3 package
Product Features and Performance
High drain-source voltage (200V)
Low on-resistance (145mOhm)
High continuous drain current (18A)
Wide operating temperature range (-55°C to 150°C)
Low input capacitance (1180pF)
High power dissipation (100W)
Product Advantages
Excellent efficiency and performance
Robust and reliable operation
Suitable for a wide range of applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 200V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 145mOhm
Continuous Drain Current (Id): 18A
Input Capacitance (Ciss): 1180pF
Power Dissipation (Ptot): 100W
Quality and Safety Features
Robust and reliable construction
Compliance with relevant safety standards
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Switching power supplies
Motor drives
Inverters
Lighting ballasts
Industrial and consumer electronics
Product Lifecycle
This product is an active, long-standing part in Fairchild (onsemi)'s portfolio. Replacement or upgrade options may be available as technology evolves.
Key Reasons to Choose This Product
Excellent performance and efficiency
Wide operating temperature range
Robust and reliable construction
Suitable for a variety of power electronics applications
Long product lifecycle and availability
FDP18N50 MOSAMI Semiconductor/onsemi