Manufacturer Part Number
FDP16AN08A0
Manufacturer
onsemi
Introduction
High-performance N-Channel MOSFET transistor
Product Features and Performance
Wide operating temperature range of -55°C to 175°C
High drain-to-source voltage of 75V
Low on-resistance (RDS(on)) of 16mΩ @ 58A, 10V
High continuous drain current of 58A (Tc)
Low input capacitance of 1857pF @ 25V
High power dissipation of 135W (Tc)
Product Advantages
Excellent thermal management
High efficiency and low power loss
Reliable and robust performance
Suitable for high-power applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 75V
Gate-to-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 16mΩ @ 58A, 10V
Continuous Drain Current (ID): 58A (Tc)
Input Capacitance (Ciss): 1857pF @ 25V
Power Dissipation (Pd): 135W (Tc)
Quality and Safety Features
RoHS3 compliant
Manufactured in ISO-certified facilities
Compatibility
Suitable for various high-power electronic applications
Application Areas
Power supplies
Motor drives
Switching converters
Industrial automation
Automotive electronics
Product Lifecycle
Currently available
No known plans for discontinuation
Key Reasons to Choose This Product
Exceptional thermal performance and efficiency
Robust and reliable operation
Suitable for high-power, high-current applications
Compliance with RoHS3 environmental standards
Compatibility with a wide range of electronic systems
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