Manufacturer Part Number
FDP22N50N
Manufacturer
onsemi
Introduction
High-voltage, high-current N-channel power MOSFET
Product Features and Performance
Drain to source voltage (Vdss) of 500V
On-resistance (Rds(on)) of 220mΩ at 11A, 10V
Continuous drain current (Id) of 22A at 25°C
Input capacitance (Ciss) of 3200pF at 25V
Power dissipation (Tc) of 312.5W
Product Advantages
High voltage and current handling capability
Low on-resistance for efficient power conversion
Suitable for high-power switching applications
Key Technical Parameters
Drain to source voltage (Vdss): 500V
Gate-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 220mΩ @ 11A, 10V
Continuous drain current (Id): 22A @ 25°C
Input capacitance (Ciss): 3200pF @ 25V
Power dissipation (Tc): 312.5W
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 150°C (TJ)
Compatibility
TO-220-3 package
Suitable for high-power switching applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and automotive electronics
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
High voltage and current handling capability for demanding applications
Low on-resistance for efficient power conversion
Suitable for a wide range of high-power switching applications
Proven reliability and performance from a reputable manufacturer
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