Manufacturer Part Number
FDP24N40
Manufacturer
Fairchild (onsemi)
Introduction
Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
Product Features and Performance
TO-220-3 package
UniFET series
MOSFET (Metal Oxide) technology
N-Channel FET type
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 175mOhm @ 12A, 10V
Continuous Drain (Id) @ 25°C: 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 25 V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Product Advantages
High voltage and current handling capability
Low on-resistance for efficient power conversion
Suitable for a wide range of applications
Key Technical Parameters
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Bulk, TO-220-3
Mounting Type: Through Hole
Quality and Safety Features
Robust design for reliable operation
Compliance with industry standards
Compatibility
Suitable for a wide range of electronic circuits and systems
Application Areas
Power supplies
Motor drives
Inverters
Switched-mode power supplies
Industrial electronics
Automotive electronics
Product Lifecycle
Current production, no discontinuation planned
Replacement or upgrade options available
Key Reasons to Choose This Product
High-performance MOSFET with excellent power handling capabilities
Optimized for efficient power conversion in various applications
Reliable and durable design for long-term use
Compatibility with a wide range of electronic systems
Availability of replacement or upgrade options as needed
FDP2552 MOSFairchild (onsemi)