FDB035AN06A0 - onsemi

Manufacturer Part Number

FDB035AN06A0

Manufacturer

onsemi

Introduction

High-power, N-channel PowerTrench MOSFET for high-efficiency power conversion applications.

Product Features and Performance

60V drain-to-source voltage

5mΩ maximum on-resistance at 80A, 10V

22A continuous drain current at 25°C ambient temperature

80A continuous drain current at 25°C case temperature

310W maximum power dissipation

Low gate charge of 124nC at 10V

Wide operating temperature range of -55°C to 175°C

Product Advantages

Excellent efficiency and thermal performance for high-power applications

Low on-resistance for low conduction losses

High current capability for high-power conversion designs

Compact DPAK (TO-263) surface-mount package

Key Technical Parameters

Drain-to-source voltage (Vdss): 60V

Maximum gate-to-source voltage (Vgs): ±20V

On-resistance (Rds(on)): 3.5mΩ @ 80A, 10V

Continuous drain current (Id): 22A (Ta), 80A (Tc)

Input capacitance (Ciss): 6400pF @ 25V

Power dissipation (Pd): 310W (Tc)

Gate charge (Qg): 124nC @ 10V

Quality and Safety Features

ROHS3 compliant

Designed and manufactured to high-quality standards

Compatibility

Surface-mount DPAK (TO-263) package

Suitable for a variety of high-power conversion applications

Application Areas

High-efficiency power supplies

Motor drives

Solar inverters

Industrial automation equipment

Telecom and server power

Product Lifecycle

Current product, not nearing discontinuation

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Excellent efficiency and thermal performance

Low on-resistance for low conduction losses

High current capability for high-power conversion designs

Compact surface-mount package

Proven reliability and quality