Manufacturer Part Number
FDB024N08BL7
Manufacturer
onsemi
Introduction
The FDB024N08BL7 is a high-power, N-channel MOSFET transistor from onsemi's PowerTrench series, designed for a wide range of power management applications.
Product Features and Performance
80V drain-to-source voltage rating
120A continuous drain current at 25°C
4mΩ maximum on-resistance at 100A, 10V
Wide operating temperature range of -55°C to 175°C
Low gate charge of 178nC at 10V
High power dissipation of 246W at case temperature
Product Advantages
Excellent power handling capabilities
Low on-resistance for efficient power conversion
Robust design for high-reliability applications
Optimized for high-frequency switching
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 80V
Maximum Gate-to-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id) at 25°C: 120A
On-Resistance (Rds(on)) at 100A, 10V: 2.4mΩ
Input Capacitance (Ciss) at 40V: 13,530pF
Gate Charge (Qg) at 10V: 178nC
Quality and Safety Features
RoHS3 compliant
Reinforced insulation for high voltage applications
Stringent quality control and reliability testing
Compatibility
TO-263-7 (D-Pak) package for surface mount applications
Compatible with standard MOSFET drivers and control circuits
Application Areas
Power supplies
Motor drives
Inverters
Electric vehicles
Industrial equipment
Product Lifecycle
In active production
Availability of replacement or upgraded products
Key Reasons to Choose This Product
High power density and efficiency for demanding power applications
Robust design for reliable operation in harsh environments
Optimized for high-frequency switching for improved system performance
Broad compatibility and ease of integration into various power systems