FDB029N06 - onsemi

Manufacturer Part Number

FDB029N06

Manufacturer

onsemi

Introduction

The FDB029N06 is a N-Channel MOSFET transistor with a PowerTrench design, packaged in a DPAK (TO-263) surface mount package.

Product Features and Performance

High current capacity of up to 120A continuous drain current at 25°C case temperature

Low on-resistance of 3.1 mΩ at 75A, 10V

Wide operating temperature range of -55°C to 175°C

High breakdown voltage of 60V drain-to-source

Input capacitance of 9815 pF at 25V

Maximum power dissipation of 231W at 25°C case temperature

Product Advantages

Efficient power transfer due to low on-resistance

Robust design for high current and temperature operation

Compact DPAK surface mount package for space-saving layouts

Key Technical Parameters

Drain-Source Voltage (Vdss): 60V

Gate-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 3.1 mΩ @ 75A, 10V

Continuous Drain Current (Id): 120A @ 25°C

Input Capacitance (Ciss): 9815 pF @ 25V

Power Dissipation (Ptot): 231W @ 25°C

Quality and Safety Features

RoHS3 compliant

Reliable PowerTrench MOSFET technology

Compatibility

Surface mount DPAK (TO-263) package

Application Areas

High current switching and power conversion applications

Industrial, automotive, and consumer electronics

Product Lifecycle

Current production part

Replacements and upgrades may be available in the future

Several Key Reasons to Choose This Product

High current handling capability up to 120A

Efficient power transfer with low on-resistance

Robust design for high temperature operation

Compact surface mount package for space-saving layouts

RoHS3 compliance for environmental responsibility