Manufacturer Part Number
FDB031N08
Manufacturer
onsemi
Introduction
High-performance N-channel PowerTrench MOSFET with low on-resistance for power switching applications
Product Features and Performance
Low on-resistance of 3.1 mΩ at 75 A and 10 V gate drive
High current capability of 120 A continuous drain current at 25°C
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 15,160 pF at 25 V
High power dissipation capability of 375 W at 25°C
Product Advantages
Excellent power efficiency due to low on-resistance
Reliable high-temperature operation
Compact surface mount DPAK (TO-263) package
Key Technical Parameters
Drain to Source Voltage (Vdss): 75 V
Gate-Source Voltage (Vgs) Max: ±20 V
Threshold Voltage (Vgs(th)) Max: 4.5 V at 250 A
Gate Charge (Qg) Max: 220 nC at 10 V
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments with -55°C to 175°C operating temperature range
Compatibility
Surface mount DPAK (TO-263) package
Application Areas
Power switching in industrial, automotive, and consumer electronics applications
Product Lifecycle
Currently in production, no discontinuation plans
Replacements and upgrades available within the onsemi PowerTrench MOSFET family
Key Reasons to Choose This Product
Excellent power efficiency and high current handling capability
Reliable operation in high-temperature environments
Compact surface mount package for space-constrained designs
Availability of replacements and upgrades within the product family
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