Manufacturer Part Number
FDB024N06
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET with low on-resistance and high current handling capability for power switching and control applications.
Product Features and Performance
Very low on-resistance of 2.4 mΩ (max) at 75 A, 10 V
High continuous drain current of 120 A at 25°C case temperature
Wide operating temperature range of -55°C to 175°C
Low gate charge of 226 nC (max) at 10 V
High power dissipation capability of 395 W at 25°C case temperature
Product Advantages
Excellent performance for power switching and control applications
Efficient power conversion with low conduction losses
Robust design for high-temperature and high-current operation
Compact DPAK (TO-263) package for space-saving PCB layouts
Key Technical Parameters
60 V drain-to-source voltage
±20 V gate-to-source voltage
5 V gate threshold voltage (max) at 250 A
14,885 pF input capacitance (max) at 25 V
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of power switching and control applications
Application Areas
Power supplies
Motor drives
Industrial controls
Automotive electronics
Product Lifecycle
This product is an active and readily available part from the manufacturer.
Several Key Reasons to Choose This Product
Excellent performance and efficiency for power switching and control
Robust and reliable design for high-temperature and high-current operation
Compact DPAK (TO-263) package for space-saving PCB layouts
RoHS3 compliance for environmentally-friendly applications