Manufacturer Part Number
FDB035N10A
Manufacturer
onsemi
Introduction
High-performance n-channel MOSFET transistor suitable for a variety of power conversion and control applications.
Product Features and Performance
100V drain-source voltage (Vdss)
5mΩ maximum on-resistance (Rds(on))
120A continuous drain current (Id) at 25°C
Wide operating temperature range of -55°C to 175°C
Low gate charge (Qg) of 116nC at 10V
Compact DPAK (TO-263) package
Product Advantages
Excellent power handling and efficiency
Compact size for space-constrained designs
Reliable performance across wide temperature range
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 3.5mΩ @ 75A, 10V
Continuous Drain Current (Id): 120A @ 25°C
Input Capacitance (Ciss): 7295pF @ 25V
Power Dissipation (Tc): 333W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for use in a variety of power conversion and control applications
Application Areas
Power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacements and upgrades may be available
Key Reasons to Choose This Product
Excellent power handling and efficiency
Compact size for space-constrained designs
Reliable performance across wide temperature range
High current capability up to 120A
Low on-resistance for improved efficiency
Wide voltage and temperature operating range
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