FCP11N60N - onsemi

Manufacturer Part Number

FCP11N60N

Manufacturer

onsemi

Introduction

The FCP11N60N is a high-power N-channel MOSFET transistor designed for use in a variety of power electronics and industrial applications.

Product Features and Performance

600V drain-to-source voltage rating

Low on-resistance of 299mΩ @ 5.4A, 10V

High continuous drain current of 10.8A at 25°C

Wide operating temperature range of -55°C to 150°C

Fast switching speed and low gate charge of 35.6nC @ 10V

Robust TO-220-3 package for reliable performance

Product Advantages

Excellent power handling and efficiency

Suitable for high-voltage, high-current applications

Reliable operation across a wide temperature range

Easy integration and replacement in existing designs

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 600V

Maximum Gate-to-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 299mΩ @ 5.4A, 10V

Continuous Drain Current (Id): 10.8A @ 25°C

Input Capacitance (Ciss): 1505pF @ 100V

Power Dissipation (Tc): 94W

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability industrial applications

Robust and durable TO-220-3 package

Compatibility

Compatible with a wide range of power electronics and industrial control systems

Application Areas

Switching power supplies

Motor drives

Inverters and converters

Industrial automation and control systems

Product Lifecycle

This product is currently in active production and widely available

Replacement or upgrade options may be available in the future, but the FCP11N60N remains a reliable and well-supported solution

Key Reasons to Choose This Product

Excellent power handling and efficiency for high-voltage, high-current applications

Wide operating temperature range and robust package for reliable performance

Easy integration and replacement in existing designs

Supported by a trusted manufacturer with a strong reputation for quality and innovation