Manufacturer Part Number
FCP130N60
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product with FET (Field Effect Transistor) technology
Product Features and Performance
N-Channel MOSFET with 600V Drain-Source Voltage
Low On-Resistance of 130mOhm at 14A, 10V
High Continuous Drain Current of 28A at 25°C
Wide Operating Temperature Range of -55°C to 150°C
Fast Switching Characteristics
Product Advantages
Reliable high-voltage operation
Efficient power conversion with low losses
Broad temperature capability
Robust and durable design
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 130mOhm
Continuous Drain Current (Id): 28A
Input Capacitance (Ciss): 3590pF
Power Dissipation (Tc): 278W
Quality and Safety Features
RoHS3 Compliant
Sturdy TO-220-3 Package
Compatibility
Suitable for a wide range of power conversion, switching, and control applications
Application Areas
Power Supplies
Motor Drives
Inverters
Welding Equipment
Industrial Controls
Product Lifecycle
This is an active product with no discontinuation plans. Replacements and upgrades within the SuperFET II series are available.
Key Reasons to Choose This Product
Reliable high-voltage operation
Efficient power conversion with low losses
Broad temperature capability
Robust and durable design
RoHS3 compliance for environmental safety
FCP13N60KERSEMI
FCP1206H103J-H2Cornell Dubilier Electronics (CDE)CAP FILM 10000PF 5% 50VDC 1206