Manufacturer Part Number
FCP125N65S3
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor with high voltage rating and low on-resistance.
Product Features and Performance
650V drain-source voltage rating
125mΩ maximum on-resistance at 12A, 10V
24A continuous drain current at 25°C case temperature
-55°C to 150°C operating temperature range
Low input capacitance of 1940pF at 400V
Maximum power dissipation of 181W at 25°C case temperature
Product Advantages
Excellent performance for high voltage, high power switching applications
Low on-resistance for high efficiency
Wide operating temperature range
Key Technical Parameters
650V drain-source voltage
±30V gate-source voltage
125mΩ maximum on-resistance
24A continuous drain current
1940pF maximum input capacitance
181W maximum power dissipation
Quality and Safety Features
RoHS3 compliant
TO-220-3 package for reliable thermal performance
Compatibility
Through-hole mounting
Suitable for a variety of high voltage, high power switching applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Power factor correction circuits
Product Lifecycle
Currently in production
No plans for discontinuation, with long-term availability expected
Key Reasons to Choose
Excellent performance and efficiency for high voltage, high power applications
Wide operating temperature range
Reliable TO-220-3 package
RoHS3 compliance for environmental compatibility