FCP11N60F - onsemi

Manufacturer Part Number

FCP11N60F

Manufacturer

onsemi

Introduction

The FCP11N60F is a high-performance N-channel power MOSFET with a 600V rating and low on-resistance.

Product Features and Performance

600V drain-to-source voltage rating

Low on-resistance of 380mΩ at 5.5A, 10V

High continuous drain current of 11A at 25°C (Tc)

Wide operating temperature range of -55°C to 150°C

Low gate charge of 52nC at 10V

Fast switching speeds

Product Advantages

Excellent performance for high-voltage, high-power applications

Efficient power conversion and control

Reliable and robust design

Key Technical Parameters

Drain-to-source voltage (Vdss): 600V

Gate-to-source voltage (Vgs): ±30V

Drain current (Id): 11A continuous at 25°C (Tc)

On-resistance (Rds(on)): 380mΩ at 5.5A, 10V

Input capacitance (Ciss): 1490pF at 25V

Power dissipation (Pd): 125W at 25°C (Tc)

Quality and Safety Features

ROHS3 compliant

Designed and manufactured to high quality standards

Compatibility

TO-220-3 package

Suitable for a wide range of high-voltage, high-power applications

Application Areas

Switch-mode power supplies

Motor drives

Inverters

Industrial and consumer electronics

Product Lifecycle

The FCP11N60F is an actively supported product in onsemi's portfolio.

Replacement or upgrade options may be available, depending on application requirements.

Key Reasons to Choose This Product

Excellent high-voltage and high-power performance

Low on-resistance for efficient power conversion

Wide operating temperature range for versatile applications

Reliable and robust design for long-term use

Compatibility with industry-standard TO-220-3 package