Manufacturer Part Number
FCP11N60
Manufacturer
onsemi
Introduction
The FCP11N60 is a high-performance, N-channel power MOSFET from onsemi. It is designed for a wide range of power management and switching applications.
Product Features and Performance
600V drain-to-source voltage rating
380mΩ maximum on-resistance at 5.5A and 10V gate-to-source voltage
11A continuous drain current at 25°C
1490pF maximum input capacitance at 25V drain-to-source voltage
52nC maximum gate charge at 10V gate-to-source voltage
-55°C to 150°C operating temperature range
Product Advantages
High voltage and current handling capability
Low on-resistance for improved efficiency
Fast switching performance
Wide operating temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±30V
Continuous Drain Current (Id): 11A at 25°C
On-Resistance (Rds(on)): 380mΩ at 5.5A, 10V
Input Capacitance (Ciss): 1490pF at 25V
Gate Charge (Qg): 52nC at 10V
Quality and Safety Features
RoHS3 compliant
TO-220-3 package for reliable electrical and thermal performance
Compatibility
The FCP11N60 is compatible with a wide range of power management and switching applications, including power supplies, motor drives, and industrial control systems.
Application Areas
Power supplies
Motor drives
Industrial control systems
Switching applications
Product Lifecycle
The FCP11N60 is an active product and is not nearing discontinuation. Replacements and upgrades are available from onsemi.
Key Reasons to Choose This Product
High voltage and current handling capability for demanding applications
Low on-resistance for improved efficiency and performance
Fast switching for enhanced system responsiveness
Wide operating temperature range for versatile use
Reliable and RoHS-compliant construction for long-term reliability