Manufacturer Part Number
FCP067N65S3
Manufacturer
onsemi
Introduction
The FCP067N65S3 is a high-performance N-channel MOSFET transistor from onsemi's SuperFET III series, designed for a variety of power conversion and control applications.
Product Features and Performance
High breakdown voltage of 650V
Low on-resistance of 67mΩ
High continuous drain current rating of 44A
Wide operating temperature range of -55°C to 150°C
Low gate charge of 78nC
Fast switching characteristics
Product Advantages
Excellent power efficiency due to low on-resistance
Robust design for reliable operation in harsh environments
Optimized for high-frequency, high-power switching applications
Compact TO-220 package for easy integration
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 650V
Maximum Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 67mΩ @ 22A, 10V
Continuous Drain Current (Id): 44A @ 25°C
Input Capacitance (Ciss): 3090pF @ 400V
Power Dissipation (Tc): 312W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Compatible with a wide range of power supply and motor control applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Current product, no discontinuation planned
Replacements and upgrades available as technology advances
Key Reasons to Choose This Product
Excellent power efficiency and performance
Robust and reliable design for harsh environments
Optimized for high-frequency, high-power switching
Compact and easy to integrate
Backed by onsemi's quality and technical support