Manufacturer Part Number
FCP104N60F
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET with low on-resistance
Product Features and Performance
High power density
Low on-resistance
Low gate charge
High-speed switching
High avalanche energy capability
Rugged and reliable
Product Advantages
Efficient power conversion
Improved system reliability
Reduced power dissipation
Compact design
Key Technical Parameters
Drain to Source Voltage (Vdss): 600 V
On-resistance (Rds(on)): 104 mΩ @ 18.5 A, 10 V
Continuous Drain Current (Id): 37 A @ 25°C (Tc)
Input Capacitance (Ciss): 6130 pF @ 25 V
Power Dissipation (Tc): 357 W
Quality and Safety Features
RoHS3 compliant
Designed for high reliability
Compatibility
TO-220-3 package
Compatible with various electronic systems
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Current product
Availability of replacements and upgrades
Key Reasons to Choose This Product
High efficiency and low power loss
Compact and reliable design
Excellent thermal management
Suitable for a wide range of applications
Backed by onsemi's quality and support