Manufacturer Part Number
AFGB40T65SQDN
Manufacturer
onsemi
Introduction
High performance, automotive-qualified single IGBT transistor in a DPak package
Product Features and Performance
650V Collector-Emitter Breakdown Voltage
80A Continuous Collector Current
1V Collector-Emitter Saturation Voltage @ 15V Gate-Emitter, 40A Collector Current
131ns Reverse Recovery Time
76nC Gate Charge
160A Pulsed Collector Current
Fast Switching: 17.6ns Turn-On, 75.2ns Turn-Off Delay Times
Product Advantages
Optimized for high efficiency automotive and industrial applications
Rugged and reliable performance
Compact DPak package
Key Technical Parameters
Voltage Rating: 650V Collector-Emitter Breakdown Voltage
Current Rating: 80A Continuous Collector Current, 160A Pulsed Collector Current
Switching Performance: 131ns Reverse Recovery Time, 17.6ns Turn-On Delay, 75.2ns Turn-Off Delay
Quality and Safety Features
AEC-Q101 automotive qualified
RoHS3 compliant
Compatibility
Suitable for a wide range of automotive and industrial applications requiring high voltage and high current IGBT transistors
Application Areas
Automotive: Engine control, transmission, power steering, braking systems
Industrial: Motor drives, power supplies, inverters, welding equipment
Product Lifecycle
This product is currently in production and is not nearing discontinuation
Replacement or upgraded products may become available in the future as technology advances
Key Reasons to Choose This Product
Excellent performance characteristics including high voltage, high current, and fast switching
Rugged and reliable design for demanding automotive and industrial applications
Compact DPak package for space-constrained designs
Automotive qualification and RoHS3 compliance ensure quality and safety