ISL9V5036S3 - onsemi

Manufacturer Part Number

ISL9V5036S3

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Single Transistor IGBT

Product Features and Performance

Power Rating: 250 W

Collector-Emitter Breakdown Voltage (Max): 390 V

Collector Current (Max): 46 A

Collector-Emitter Saturation Voltage (Max): 1.6 V @ 4 V, 10 A

Gate Charge: 32 nC

Turn-On/Turn-Off Delay Time: -/10.8 μs

Operating Temperature Range: -40°C to 175°C

Product Advantages

High power handling capability

Low conduction losses

Fast switching performance

Key Technical Parameters

Collector-Emitter Breakdown Voltage

Collector Current

Collector-Emitter Saturation Voltage

Gate Charge

Switching Time

Quality and Safety Features

TO-262AA package with long leads

Designed for reliable and safe operation

Compatibility

Compatible with various electronic circuits and systems requiring high-power IGBT transistors

Application Areas

Power supplies

Motor drives

Industrial control equipment

Welding machines

Induction heating systems

Product Lifecycle

Current product

Replacement and upgrade options may be available

Key Reasons to Choose This Product

High power handling

Low conduction losses

Fast switching capability

Reliable and safe operation

Compatibility with a wide range of applications