Manufacturer Part Number
ISL9V5045S3ST
Manufacturer
onsemi
Introduction
High-performance insulated-gate bipolar transistor (IGBT) designed for high-power applications
Product Features and Performance
Optimized for hard-switching applications
Low on-state voltage drop for high efficiency
Fast turn-off and low switching losses
Rugged design with high short-circuit withstand capability
Qualified to automotive standards
Product Advantages
Excellent thermal and electrical performance
Reliable and robust design
Suitable for high-power applications
Key Technical Parameters
480V collector-emitter breakdown voltage
51A maximum collector current
6V maximum collector-emitter saturation voltage
32nC gate charge
-40°C to 175°C operating temperature range
300W maximum power
Quality and Safety Features
RoHS3 compliant
Automotive-grade quality and reliability
Compatibility
Suitable for a wide range of high-power applications, including motor drives, power supplies, and industrial equipment
Application Areas
High-power industrial and automotive applications
Inverters, servo drives, and other power electronics systems
Product Lifecycle
Currently in production
Replacements and upgrades available as needed
Key Reasons to Choose This Product
Excellent electrical and thermal performance
Reliable and robust design for high-power applications
Automotive-grade quality and safety features
Suitable for a wide range of high-power industrial and automotive applications