ISL9V5036P3 - Fairchild Semiconductor

Manufacturer Part Number

ISL9V5036P3

Manufacturer

Fairchild (onsemi)

Introduction

High-performance IGBT transistor designed for a variety of power conversion and control applications

Product Features and Performance

Optimized for fast switching and low conduction losses

Wide operating temperature range of -40°C to 175°C (TJ)

High power rating of up to 250 W

High voltage rating of up to 390 V

High current rating of up to 46 A

Low on-state voltage drop of 1.6 V at 4 V gate, 10 A

Fast switching with turn-off time of 10.8 μs

Product Advantages

Excellent efficiency and thermal performance

Reliable and durable operation

Versatile for various power conversion and control applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCE(BR)): 390 V

Collector Current (IC): 46 A

On-State Voltage Drop (VCE(ON)): 1.6 V @ 4 V, 10 A

Gate Charge (QG): 32 nC

Turn-Off Delay Time (td(off)): 10.8 μs

Quality and Safety Features

RoHS3 compliant

Proven reliability and quality through Fairchild (onsemi) manufacturing processes

Compatibility

Suitable for a wide range of power conversion and control applications, such as motor drives, power supplies, and inverters

Application Areas

Industrial power conversion and control

Renewable energy systems

Household appliances

Automotive electronics

Product Lifecycle

Currently in production

Replacements and upgrades may be available in the future

Several Key Reasons to Choose This Product

High efficiency and low conduction losses for improved system performance

Wide operating temperature range for versatile applications

Reliable and durable operation for long-lasting performance

Proven quality and safety through Fairchild (onsemi) manufacturing

Suitable for a variety of power conversion and control applications