ISL9V5036S3ST - onsemi

Manufacturer Part Number

ISL9V5036S3ST

Manufacturer

onsemi

Introduction

High-performance IGBT transistor with superior switching characteristics and robust thermal management

Product Features and Performance

Wide operating temperature range of -40°C to 175°C

High power handling capability of up to 250W

High collector-emitter breakdown voltage of 390V

High collector current rating of 46A

Low on-state voltage drop of 1.6V at 4V gate-emitter voltage and 10A collector current

Fast switching speed with turn-off time of 10.8μs

Low gate charge of 32nC for efficient switching

Product Advantages

Optimized for high-power, high-efficiency switch-mode power supplies and motor drives

Excellent thermal performance for reliable operation in harsh environments

Compact DPAK (TO-263) surface-mount package for space-efficient designs

Key Technical Parameters

Collector-Emitter Breakdown Voltage (max): 390V

Collector Current (max): 46A

On-State Voltage Drop (max): 1.6V

Gate Charge: 32nC

Turn-Off Delay Time: 10.8μs

Quality and Safety Features

RoHS3 compliant for environmental sustainability

Robust DPAK (TO-263) package for mechanical reliability

Compatibility

Compatible with various high-power, high-efficiency applications such as switch-mode power supplies, motor drives, and industrial electronics

Application Areas

Switch-mode power supplies

Motor drives

Industrial electronics

High-power, high-efficiency applications

Product Lifecycle

This product is currently in active production and is not nearing discontinuation.

Replacement or upgrade options may be available from onsemi as technology evolves.

Key Reasons to Choose This Product

Exceptional power handling and thermal performance

Reliable and efficient switching characteristics

Compact and robust DPAK (TO-263) package

Wide operating temperature range for use in diverse environments

RoHS3 compliance for environmentally-friendly design